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The supply and applications of HFO-1336mzz-E

2020-03-26 14:19

Beijing Yuji is one of the manufacturers of fluorine-containing chemicals, which has the production and purification technology of trans-1,1,1,4,4,4-hexafluoro-2-butene (HFO-133mzz-E), whose purity can arrive Grade 3N (99.9%).

1,1,1,4,4,4-hexafluoro-2-butene has an ozone depletion potential of zero and low global warming potential (GWP). It exists as two different stereoisomers, cis-1,1,1,4,4,4-hexafluoro-2-butene (HFO-133mzz-Z) & trans-1,1,1,4,4,4-hexafluoro-2-butene (HFO-133mzz-E), which have different boiling points and possibly perform differently in different applications. HFO-1336mzz(E) has a GWP of 18, a boiling point of 7.5℃ and a critical temperature of 137.7 ℃. It has a favorable toxicity and shown good compatibility with many plastics and elastomers commonly encountered in equipment presently. Trans-1,1,1,4,4,4-hexafluoro-2-butene (HFO-133mzz-E) is a novel, non-flammable, odorless gas that finds uses as a foam transfer agent, heat transfer working fluid, and specialty gas.

As a working fluid, it can be used in waste heat recovery applications such as high temperature heat pumps (HTHP) and Organic Rankine Cycle (ORC). In the year of 2011, DU PONT DE NEMOURS AND COMPANY published an international application patent that disclosed are compositions of novel working fluids uniquely designed for higher cycle efficiencies leading to higher overall system efficiencies. In particular, these working fluids are useful in Organic Rankine Cycle systems for efficiently converting o heat from any heat source into mechanical energy. The present invention also relates to novel processes for recovering heat from a heat source using ORC systems with a novel working fluid comprising at least about 20 weight percent cis-1,1,1,4,4,4-hexafluoro-2butene (HFO-1336mzz-Z), trans-1,1,1,4,4,4-hexafluoro-2-butene (HFO-1336mzz E), or mixtures thereof.

After that, DU PONT DE NEMOURS AND COMPANY disclosed a method for producing heating in a heat pump that involves extracting heat from a working fluid comprising E-HFO-1336mzz, in a heat exchanger, thereby producing a cooled working fluid again in Aug., 2012. Also disclosed is a method for producing heating in a heat pump wherein heat is exchanged between at least two cascade stages. Also disclosed is a heat pump apparatus including a working fluid heater, compressor, working fluid cooler and expansion device and said apparatus contains a working fluid comprising E-HFO-1336mzz. Also disclosed is a method for replacing CFC-114, HFC-245fa, HFC-236fa, HCFC-124, HFC-134a, CFC-12 working fluid in a heat pump designed for said working fluid that involves providing a replacement working fluid comprising E-HFO-1336mzz. Also disclosed is a composition containing a working fluid consisting essentially of E-HFO-1336mzz; and a stabilizer; or a lubricant; or both a stabilizer and a lubricant.

The Chemours company has applied the invention relates to fluoroolefin compositions useful as gases for CVD semiconductor manufacture, particularly for etching applications including methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture, and methods for etching the surface of a semiconductor.

The invention provides a clean or etch gas mixture that have low EHS and GWP, so that even if unreacted gases are released, they have reduced environ mental impact. In one aspect of the invention, the invention includes an etch gas mixture comprising at least one fluoroolefin and oxygen, wherein the fluoroolefin is selected from the group consisting essentially of HFO-1123, HFO-1234yf, HFO-1234ze(E), HFO-1234ze(Z), HFO-1233zd, HFO-1336mzz(Z) and HFO-1336mzz(E), ect.(details shown on Table 1) The gas mixtures comprise a hydrofluoroolefin having up to four carbons (C4) with the percent fluorine equal to or higher than 65%. The gas mixture may also have a ration of H to F ratio equal to or less than 60%.

Table 1

In the invention, a method of operation of a semiconductor manufacturing process chamber, comprising etching a film on a semiconductor using an etch gas comprising a first fluoroolefin and a second fluoroolefin, wherein the first fluoroolefin is trans-1,1,1,4,4,4-hexafluoro-2-butene and the second fluoroolefin is 1,1,1,4,4,4-hexafluoro-2-butyne. A method for removing surface deposits from a surface in a process chamber, comprising: activating a gas mixture comprising oxygen, a first fluoroolefin, and a second fluoroolefin wherein the molar percentage of fluroolefin in the said gas mixture is from about 5% to about 99%, and contacting said activated gas mixture with the surface deposits and thereby removing at least some of said deposits; wherein the first fluoroolefin is trans-1,1,1,4,4,4-hexafluoro-2-butene and the second fluoroolefin is 1,1,1,4,4,4-hexafluoro-2-butyne.

THE CHEMOURS COMPANY also published a comprehensive patent in Feb., 2015. The present disclosure relates to compositions comprising E-1,1,1,4,4,4-hexafluoro-2-butene and additional compounds that may be useful as refrigerants, heat transfer compositions, aerosol propellants, foaming agents, blowing agents, solvents, cleaning agents, carrier fluids, displacement drying agents, buffing abrasion agents, polymerization media, expansion agents for polyolefins and polyurethane, gaseous dielectrics, power cycle working fluids, extinguishing agents, and fire suppression agents in liquid or vapor form, and in methods for detecting leaks.