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新闻中心 Semiconductor IC Manufacturing> Summary of application patents related to the etching gas HFC-41

Summary of application patents related to the etching gas HFC-41

2019-12-25 14:04

Introduction

Methyl Fluoride (CH3F) , also known as Fluoromethane, Freon 41, Halocarbon-41 and HFC-41, is a non-toxic, liquefied and flammable gas at standard temperature and pressure. It is an environmentally friendly dry etching gas with low GWP, which shows very high performance in plasma etching of silicon compound films in semiconductor manufacturing. Etching of the Si3N4 spacer can be achieved in CH3F-O2-He mixtures, which offer a high selectivity towards silicon. CH3F/C4F8 Ratio will have effect on the Oxide-to-Nitride Selectivity in a Self-Aligned-Contact etching process. CH3F is also expected to outpace capacity as 3D NAND flash start-ups.

Applicant and Patent

APPLICANT PATENT NAME
United microelectronics corp.(TW) Semiconductor device having spacer with tapered profile
APPLIED MATERIALS INC [US] Dielectric etch method with high source and low bombardment plasma providing high etch rates
UNITED MICROELECTRONICS CORP Semiconductor device and method for fabricating the same
TOKYO ELECTRON LTD Exhaust gas explosion prevention method for reduced pressure processing device
HITACHI HIGH TECH CORP Dry etching method
LAM RES CORP Line edge roughness control
PROMOS TECHNOLOGIES INC Method of etching capable of avoiding loading effect and controlling the thickness of screen oxide
CENTRAL GLASS CO LTD [JP] Etching Gas
TOKYO ELECTRON LTD PLASMA TREATMENT METHOD AND PLASMA TREATMENT DEVICE
 FUJITSU SEMICONDUCTOR LTD [JP] Method of etching silicon nitride by a mixture of CH2F2, CH3F or CHF3 and an inert gas
CENTRAL GLASS CO LTD [JP] Cleaning Gas
SEMICONDUCTOR MFG INT SHANGHAI Semiconductor device used in interconnection technology and manufacturing method thereof
ADVANCED TECH MATERIALS [US] Cleaning of semiconductor processing systems
TAIWAN SEMICONDUCTOR MFG Method for forming a tapered profile insulator shape
SAMSUNG ELECTRONICS CO LTD Composition for a wiring, a wiring using the composition, a manufacturing method thereof, a display using the wiring and a manufacturing method thereof